Global memory solutions provider Kioxia has announced that sample shipments for its revolutionary 2Tb (terabit) Quad-Level-Cell (QLC) memory devices have begun. This 2Tb QLC device, which uses the company’s eighth-generation BiCS FLASH 3D flash memory technology, raises the bar for capacity and is expected to have a substantial influence on a number of application categories, including artificial intelligence (AI).
Kioxia’s latest BiCS FLASH technology leverages both vertical and lateral scaling of memory die through proprietary processes and innovative architectures. A key component of this advancement is the CBA (CMOS directly Bonded to Array) technology, which would facilitate the creation of higher-density devices and achieve an interface speed of 3.6Gbps. These technological innovations culminate in the production of the 2Tb QLC, the highest capacity memory device currently available.
This new 2Tb QLC memory device boasts a bit density approximately 2.3 times higher and a write power efficiency about 70 percent greater than Kioxia’s fifth-generation QLC device. Featuring a 16-die stacked architecture within a single memory package, it reaches an impressive 4TB (terabyte) capacity. The device is compact, with a package size of 11.5 x 13.5mm and a height of just 1.5mm, making it ideal for applications where space efficiency is critical.
Charles Giancarlo, Chief Executive Officer of Pure Storage, global provider of advanced data storage technology, underscored the importance of Kioxia’s latest development for his company’s platform. “We have a long-standing relationship with Kioxia and are delighted to incorporate their eighth-generation BiCS FLASH 2Tb QLC flash memory products to enhance the performance and efficiency of our all-flash storage solutions. Pure’s unified all-flash data storage platform can meet the demanding needs of artificial intelligence as well as the aggressive costs of backup storage. Backed by Kioxia technology, Pure Storage will continue to offer unmatched performance, power efficiency, and reliability, delivering exceptional value to our customers.”
2Tb QLC for Capacity, 1Tb QLC Performance
Hideshi Miyajima, Chief Technology Officer of Kioxia, expressed his satisfaction with the new development. “We are pleased to be shipping samples of our new 2Tb QLC with the new eighth-generation BiCS FLASH technology. With its industry-leading high bit density, high-speed data transfer, and superior power efficiency, the 2Tb QLC product will offer new value for rapidly emerging AI applications and large storage applications demanding power and space savings.”
In addition to the 2Tb QLC, Kioxia has expanded its portfolio with the introduction of 1Tb QLC memory devices. While the 2Tb QLC is optimized for capacity, the 1Tb QLC is designed for performance, offering approximately 30 percent faster sequential write performance and about a 15 percent improvement in read latency. The 1Tb QLC is targeted at high-performance applications, including client SSDs and mobile devices.
Kioxia’s QLC technology breakthroughs are expected to propel the company’s growth in a number of application areas, demonstrating its dedication to innovation and leadership in the memory solutions sector. With the release of these memory modules that combine performance and capacity, Kioxia would be in a good position to adapt to the changing needs of new applications and technologies.